IRF740 N-Channel power MOSFET 400V 10A TO-220 at Drain-Source Capacitance (Cd): 480 pF

Drain-Source Capacitance (Cd): 480 pF

So after using this method IR sensor need not be calibrated for different ambiance condition

Low power consumption: 1

Capacity accumulation — tracks total mAh and mWh delivered over a session

it is perfect for space-constrained embedded projects and wearable electronics

IRF740 N-Channel power MOSFET 400V 10A TO-220 at Drain-Source Capacitance (Cd): 480 pFThe IRF740 is an N Channel enhancement mode silicon gate power MOSFET designed for high voltage switching applications. It is avalanche rated and features nanosecond switching speeds, making it ideal for switching regulators, motor drivers, and high power converters. Key Specifications: Type: N Channel Enhancement Mode Power MOSFET Drain Source Voltage (VDS): 400V Continuous Drain Current (ID): 10A On State Resistance (RDS(on)): 0. 55 max Power